PN2907AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Transistor Element Material :

SILICON

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Gain Bandwidth Product :

200MHz

Collector Emitter Saturation Voltage :

-1.6V

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

1.6V

Voltage - Rated DC :

-60V

Collector Base Voltage (VCBO) :

-60V

Frequency :

200MHz

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Transition Frequency :

200MHz

Published :

2007

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3

JESD-609 Code :

e1

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Current Rating :

-600mA

RoHS Status :

RoHS Compliant

Pin Count :

3

Packaging :

Bulk

Lead Free :

Lead Free

Base Part Number :

PN2907A

Turn On Time-Max (ton) :

45ns

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Power Dissipation :

625mW

Polarity/Channel Type :

PNP

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

hFE Min :

75

Number of Terminations :

3

Max Power Dissipation :

625mW

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

600mA

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Current - Collector Cutoff (Max) :

10nA ICBO

Collector Emitter Breakdown Voltage :

60V