SS8050CTA
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- Mfr.Part #
- SS8050CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 36
- In Stock ：
- 36
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Published :
- 2010
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 240mg
- ECCN Code :
- EAR99
- Transition Frequency :
- 190MHz
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 60V
- Mounting Type :
- Through Hole
- hFE Min :
- 85
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 25V
- Max Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 25V
- Collector Base Voltage (VCBO) :
- 40V
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Height :
- 4.58mm
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 25V
- Number of Terminations :
- 3
- Max Collector Current :
- 1.5A
- Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Current Rating :
- 1.5A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Number of Elements :
- 1
- Length :
- 4.58mm
- Width :
- 3.86mm
- Base Part Number :
- SS8050
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tape and Box (TB)
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Datasheets
- SS8050CTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
SS8050CTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 190MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
SS8050CTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050CTA Applications
There are a lot of ON Semiconductor
SS8050CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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