SS8050DBU
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- Mfr.Part #
- SS8050DBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 4,196
- In Stock ：
- 4,196
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Finish :
- Tin (Sn)
- Width :
- 3.86mm
- Height :
- 4.58mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Published :
- 2007
- hFE Min :
- 85
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Weight :
- 179mg
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1W
- Max Collector Current :
- 1.5A
- Packaging :
- Bulk
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 40V
- Voltage - Rated DC :
- 25V
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 25V
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Base Part Number :
- SS8050
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 1W
- Current Rating :
- 1.5A
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Length :
- 4.58mm
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Transition Frequency :
- 190MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Output Power :
- 2W
- Collector Emitter Breakdown Voltage :
- 25V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Datasheets
- SS8050DBU
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8050DBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 80mA, 800mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.A transition frequency of 190MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.
SS8050DBU Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050DBU Applications
There are a lot of ON Semiconductor
SS8050DBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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