STD100N10LF7AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

125W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Avalanche Energy Rating (Eas) :

200 mJ

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain-source On Resistance-Max :

0.011Ohm

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Series :

Automotive, AEC-Q101, STripFET™ F7

Vgs (Max) :

±20V

Base Part Number :

STD10

FET Type :

N-Channel

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

320A

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

9m Ω @ 40A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)