STD105N10F7AG

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Mfr.Part #
STD105N10F7AG
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 80A DPAK
Stock
76,568
In Stock :
76,568

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
Automotive, AEC-Q101, STripFET™ F7
FET Type :
N-Channel
Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs :
61nC @ 10V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
4369pF @ 50V
Drain to Source Voltage (Vdss) :
100V
Packaging :
Cut Tape (CT)
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
8m Ω @ 40A, 10V
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Part Number :
STD10
Vgs(th) (Max) @ Id :
4.5V @ 250μA
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Continuous Drain Current (ID) :
80A
Power Dissipation-Max :
120W Tc
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
STD105N10F7AG
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD105N10F7AG from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Base Part Number:STD10, Mounting Type:Surface Mount, STD105N10F7AG pinout, STD105N10F7AG datasheet PDF, STD105N10F7AG amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD105N10F7AG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD105N10F7AG


N-Channel Cut Tape (CT) 8m Ω @ 40A, 10V ±20V 4369pF @ 50V 61nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

STD105N10F7AG Description


This N-channel Power MOSFET employs STripFETTM F7 technology, which features an improved trench gate structure that lowers onstate resistance while lowering internal capacitance and gate charge for faster and more efficient switching.



STD105N10F7AG Features


  • Designed for use in automobiles and

  • AEC-Q101 accredited

  • RDS(on) is one of the lowest on the market.

  • Outstanding FoM (figure of merit)

  • EMI immunity requires a low Crss/Ciss ratio.

  • Avalanche toughness is high.



STD105N10F7AG Applications


Switching applications


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