STD100N3LF3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Power Dissipation-Max :

110W Tc

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Base Part Number :

STD10

Number of Elements :

1

Mount :

Surface Mount

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Resistance :

4.5mOhm

Continuous Drain Current (ID) :

80A

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Lead Free :

Lead Free

Turn-Off Delay Time :

31 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 40A, 10V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2060pF @ 25V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

35 ns

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

500 mJ

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

STripFET™ II

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

110W

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Turn On Delay Time :

9 ns

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mounting Type :

Surface Mount

Rise Time :

205ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2