STD1802T4
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- Mfr.Part #
- STD1802T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A DPAK
- Stock
- 11,519
- In Stock ：
- 11,519
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Transition Frequency :
- 150MHz
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Frequency :
- 150MHz
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Max Power Dissipation :
- 15W
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Configuration :
- Single
- Terminal Position :
- Single
- Number of Elements :
- 1
- Packaging :
- Cut Tape (CT)
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 3A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 3A
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- Power Dissipation :
- 15W
- Number of Terminations :
- 2
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Base Part Number :
- STD18
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Datasheets
- STD1802T4
NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
STD1802T4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 150mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 3A volts.
STD1802T4 Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
STD1802T4 Applications
There are a lot of STMicroelectronics
STD1802T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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