STGW30N120KD
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- Mfr.Part #
- STGW30N120KD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 60A 220W TO247
- Stock
- 30
- In Stock ：
- 30
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Power - Max :
- 220W
- Reverse Recovery Time :
- 84 ns
- Gate Charge :
- 105nC
- Polarity/Channel Type :
- N-Channel
- Series :
- PowerMESH™
- JEDEC-95 Code :
- TO-247AC
- Lead Free :
- Lead Free
- Package / Case :
- TO-247-3
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 220W
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Gate-Emitter Thr Voltage-Max :
- 5.75V
- Element Configuration :
- Single
- Td (on/off) @ 25°C :
- 36ns/251ns
- Operating Temperature :
- -55°C~125°C TJ
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Turn Off Time-Nom (toff) :
- 756 ns
- Switching Energy :
- 2.4mJ (on), 4.3mJ (off)
- Turn On Time :
- 57 ns
- Max Collector Current :
- 60A
- Input Type :
- Standard
- Current - Collector Pulsed (Icm) :
- 100A
- ECCN Code :
- EAR99
- Test Condition :
- 960V, 20A, 10 Ω, 15V
- Base Part Number :
- STGW30
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Vce(on) (Max) @ Vge, Ic :
- 3.85V @ 15V, 20A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Packaging :
- Tube
- Transistor Application :
- Motor Control
- Gate-Emitter Voltage-Max :
- 25V
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Datasheets
- STGW30N120KD
STGW30N120KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGW30N120KD Description
The STGW30N120KD high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low ON-state behaviour.
STGW30N120KD Features
-
Low on-losses
-
High current capability
-
Low gate charge
-
Short circuit withstand time 10 μs
-
IGBT co-packaged with Ultrafast free-wheeling diode
STGW30N120KD Applications
-
New Energy Vehicles, Photovoltaic & Wind Power Generation, Smart Grid
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