TIP100
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- Mfr.Part #
- TIP100
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220
- Stock
- 759
- In Stock ：
- 759
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 8A
- Pbfree Code :
- yes
- Pin Count :
- 3
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Packaging :
- Tube
- Weight :
- 4.535924g
- Height :
- 6.35mm
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- No
- Package / Case :
- TO-220-3
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Width :
- 25.4mm
- Power Dissipation :
- 40W
- Base Part Number :
- TIP10*
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 60V
- Current Rating :
- 8A
- Collector Emitter Breakdown Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Published :
- 2001
- Current - Collector Cutoff (Max) :
- 50μA
- hFE Min :
- 200
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 60V
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Continuous Collector Current :
- 4A
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Transistor Type :
- NPN - Darlington
- Factory Lead Time :
- 2 Weeks
- Polarity :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Max Power Dissipation :
- 2W
- Collector Emitter Saturation Voltage :
- 2V
- Collector Emitter Voltage (VCEO) :
- 60V
- Length :
- 6.35mm
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- TIP100
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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