TIP101
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- Mfr.Part #
- TIP101
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220-3
- Stock
- 1,002
- In Stock ：
- 1,002
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 2V
- JESD-609 Code :
- e3
- Current Rating :
- 8A
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- hFE Min :
- 200
- Lead Free :
- Lead Free
- Transistor Type :
- NPN - Darlington
- Packaging :
- Tube
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Length :
- 6.35mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Surface Mount :
- No
- Base Part Number :
- TIP10*
- Published :
- 2000
- Current - Collector Cutoff (Max) :
- 50μA
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 80W
- Max Collector Current :
- 8A
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Pin Count :
- 3
- Radiation Hardening :
- No
- Width :
- 25.4mm
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Height :
- 6.35mm
- Peak Reflow Temperature (Cel) :
- 260
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Operating Temperature :
- -65°C~150°C TJ
- Polarity :
- NPN
- Datasheets
- TIP101
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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