TIP100
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- Mfr.Part #
- TIP100
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220-3
- Stock
- 759
- In Stock ：
- 759
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 2V
- Package / Case :
- TO-220-3
- Height :
- 6.35mm
- Width :
- 25.4mm
- Current Rating :
- 8A
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Continuous Collector Current :
- 4A
- Max Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50μA
- Pin Count :
- 3
- Length :
- 6.35mm
- Surface Mount :
- No
- Voltage - Rated DC :
- 60V
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 8A
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2001
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 60V
- Base Part Number :
- TIP10*
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Weight :
- 4.535924g
- hFE Min :
- 200
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Element Configuration :
- Single
- Power Dissipation :
- 40W
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- NPN - Darlington
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- TIP100
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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