TIP100
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- Mfr.Part #
- TIP100
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220-3
- Stock
- 759
- In Stock ：
- 759
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Max Power Dissipation :
- 2W
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Width :
- 25.4mm
- ECCN Code :
- EAR99
- hFE Min :
- 200
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 6.35mm
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Transistor Type :
- NPN - Darlington
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 60V
- Case Connection :
- COLLECTOR
- Height :
- 6.35mm
- Max Collector Current :
- 8A
- Factory Lead Time :
- 2 Weeks
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 60V
- Continuous Collector Current :
- 4A
- Current - Collector Cutoff (Max) :
- 50μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Polarity :
- NPN
- Current Rating :
- 8A
- Collector Emitter Saturation Voltage :
- 2V
- Power Dissipation :
- 40W
- Base Part Number :
- TIP10*
- Datasheets
- TIP100
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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