BSH202,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Resistance :

900mOhm

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 24V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Mode :

ENHANCEMENT MODE

Weight :

4.535924g

Height :

6.35mm

Transistor Element Material :

SILICON

Number of Terminations :

3

Surface Mount :

yes

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Fall Time (Typ) :

4.5 ns

Vgs(th) (Max) @ Id :

1.9V @ 1mA

Power Dissipation-Max :

417mW Ta

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 10V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Terminal Position :

Dual

Power Dissipation :

417mW

Current - Continuous Drain (Id) @ 25°C :

520mA Ta

Time@Peak Reflow Temperature-Max (s) :

30

Dual Supply Voltage :

-30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

-1.9V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Turn On Delay Time :

2 ns

FET Type :

P-Channel

Turn-Off Delay Time :

45 ns

Continuous Drain Current (ID) :

-520mA

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

900m Ω @ 280mA, 10V

Number of Pins :

3

Width :

6.35mm

Lead Free :

Lead Free

Rise Time :

4.5ns

Drain Current-Max (Abs) (ID) :

0.52A

Drain to Source Breakdown Voltage :

30V

Nominal Vgs :

-1.9 V

Published :

1998

Additional Feature :

LOGIC LEVEL COMPATIBLE

Contact Plating :

Tin

Termination :

SMD/SMT

Number of Elements :

1

Max Dual Supply Voltage :

-30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.35mm