BSH205,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 9.6V

Vgs (Max) :

±8V

Number of Terminations :

3

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

12V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

400m Ω @ 430mA, 4.5V

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs(th) (Max) @ Id :

680mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 4.5V

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

JESD-609 Code :

e3

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.5Ohm

Power Dissipation-Max :

417mW Ta

HTS Code :

8541.21.00.95

Drain Current-Max (Abs) (ID) :

0.75A

Published :

1998

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

12V

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

750mA Ta

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Surface Mount :

yes