BSH205G2VL

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

950mV @ 250μA

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

2A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

JESD-30 Code :

R-PDSO-G3

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

170m Ω @ 2A, 4.5V

Drain-source On Resistance-Max :

0.17Ohm

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Mounting Type :

Surface Mount

Terminal Position :

Dual

FET Type :

P-Channel

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

Number of Terminations :

3

Transistor Element Material :

SILICON

Published :

2015

Power Dissipation-Max :

480mW Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-236AB

Series :

Automotive, AEC-Q101

Input Capacitance (Ciss) (Max) @ Vds :

418pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1