BSN20,215

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Threshold Voltage :

1 V

Drain to Source Voltage (Vdss) :

50 V

Mount :

Surface Mount

Contact Plating :

Tin

Weight :

4.535924 g

Drain to Source Resistance :

15 Ω

Product Status :

Active

JESD-30 Code :

R-PDSO-G3

Radiation Hardening :

No

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Base Product Number :

BSN2

RoHS :

Compliant

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

8 pF

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

50 V

Package Shape :

RECTANGULAR

Max Dual Supply Voltage :

50 V

Package :

Bulk

Gate to Source Voltage (Vgs) :

20 V

Element Configuration :

Single

Power Dissipation :

830 mW

DS Breakdown Voltage-Min :

50 V

Series :

*

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Max Operating Temperature :

150 °C

Resistance :

15 Ω

Reach Compliance Code :

Compliant

Terminal Position :

Dual

Number of Elements :

1

Length :

3 mm

Number of Pins :

3

Termination :

SMD/SMT

Rds On Max :

15 Ω

Dual Supply Voltage :

50 V

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

830 mW

Continuous Drain Current (ID) :

170 mA

ECCN Code :

EAR99

Manufacturer :

Nexperia

Min Operating Temperature :

-65 °C

Drain-source On Resistance-Max :

20 Ω

Number of Terminals :

3

Nominal Vgs :

1 V

Width :

1.4 mm

Surface Mount :

yes

Height :

1 mm

Input Capacitance :

17 pF

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Terminal Form :

Gull wing