BSN254A,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

1W Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.4V 10V

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

2V @ 1mA

Pin Count :

3

Rds On (Max) @ Id, Vgs :

5 Ω @ 300mA, 10V

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

250V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Packaging :

Tape and Box (TB)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain-source On Resistance-Max :

7Ohm

FET Type :

N-Channel

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

O-PBCY-T3

Published :

2002

Number of Elements :

1

Drain to Source Voltage (Vdss) :

250V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Feedback Cap-Max (Crss) :

15 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

0.3A