BSN20,235

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

173mA Ta

Drain to Source Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Power Dissipation :

830mW

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

15 Ω @ 100mA, 10V

Max Dual Supply Voltage :

50V

Transistor Element Material :

SILICON

Number of Elements :

1

Operating Temperature :

-65°C~150°C TJ

Continuous Drain Current (ID) :

173mA

Element Configuration :

Single

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Feedback Cap-Max (Crss) :

8 pF

Published :

2017

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Series :

TrenchMOS™

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

1V @ 1mA

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

20Ohm

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

HTS Code :

8541.21.00.95

Number of Terminations :

3

Vgs (Max) :

±20V

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

830mW Tc