BSN254,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Terminations :

3

JESD-609 Code :

e3

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

250V

JESD-30 Code :

O-PBCY-T3

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

5 Ω @ 300mA, 10V

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Packaging :

Tape and Box (TB)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

0.3A

Mounting Type :

Through Hole

Number of Elements :

1

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

Drain to Source Voltage (Vdss) :

250V

Drive Voltage (Max Rds On,Min Rds On) :

2.4V 10V

Pin Count :

3

Drain-source On Resistance-Max :

7Ohm

Published :

2002

Power Dissipation-Max :

1W Ta

Feedback Cap-Max (Crss) :

15 pF

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE