BSP225,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

15 Ω @ 200mA, 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

225mA Ta

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

1.5W Ta

Continuous Drain Current (ID) :

-225mA

Feedback Cap-Max (Crss) :

15 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-261-4, TO-261AA

Transistor Application :

SWITCHING

Number of Pins :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

2.8V @ 1mA

DS Breakdown Voltage-Min :

250V

Terminal Form :

Gull wing

Power Dissipation :

1.5W

FET Type :

P-Channel

Transistor Element Material :

SILICON

Factory Lead Time :

6 Weeks

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

150°C TJ

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.225A

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

250V

Input Capacitance (Ciss) (Max) @ Vds :

90pF @ 25V

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Published :

1998