BSP250,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Continuous Drain Current (ID) :

-2.8mA

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Terminal Position :

Dual

HTS Code :

8541.21.00.75

Power Dissipation-Max :

1.65W Ta

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Elements :

1

ECCN Code :

EAR99

Terminal Form :

Gull wing

JESD-609 Code :

e3

Number of Terminations :

4

Number of Pins :

3

JESD-30 Code :

R-PDSO-G4

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

Power Dissipation :

5W

Package / Case :

TO-261-4, TO-261AA

Pulsed Drain Current-Max (IDM) :

12A

Drain Current-Max (Abs) (ID) :

3A

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Published :

1998

Drain-source On Resistance-Max :

0.4Ohm

Rds On (Max) @ Id, Vgs :

250m Ω @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 20V

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Pin Count :

4