BSP250,135

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.65W Ta

Mounting Type :

Surface Mount

Number of Terminations :

4

ECCN Code :

EAR99

Surface Mount :

yes

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Pin Count :

4

Number of Pins :

4

Drain Current-Max (Abs) (ID) :

3A

Lead Free :

Lead Free

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Max Dual Supply Voltage :

-30V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

250m Ω @ 1A, 10V

Vgs (Max) :

±20V

Resistance :

250mOhm

Power Dissipation :

1.65W

Pulsed Drain Current-Max (IDM) :

12A

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Drain to Source Breakdown Voltage :

30V

Published :

1998

Continuous Drain Current (ID) :

3A

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 20V

Radiation Hardening :

No

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant