2N3019S

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-65°C~200°C TJ

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA 10V

Collector Base Voltage (VCBO) :

140V

Terminal Position :

BOTTOM

Terminal Finish :

Gold (Au)

Published :

2005

JESD-609 Code :

e4

Collector Emitter Voltage (VCEO) :

80V

Current - Collector Cutoff (Max) :

10nA

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Collector Emitter Breakdown Voltage :

80V

Emitter Base Voltage (VEBO) :

7V

Terminal Form :

Wire

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

3

Pbfree Code :

No

Max Power Dissipation :

800mW

Package / Case :

TO-205AD, TO-39-3 Metal Can

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Configuration :

Single

Factory Lead Time :

12 Weeks

Number of Pins :

3

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Radiation Hardening :

No

Transistor Type :

NPN

Power Dissipation :

800mW

Number of Elements :

1

Mount :

Through Hole

Max Collector Current :

1A

Packaging :

Bulk

Pin Count :

2