2N3019P

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Mfr.Part #
2N3019P
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
SMALL-SIGNAL BJT
Stock
9,107
In Stock :
9,107

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Frequency - Transition :
100MHz
Surface Mount :
No
Operating Temperature :
-65°C~200°C TJ
Package / Case :
TO-205AD, TO-39-3 Metal Can
Packaging :
Bulk
Current - Collector Cutoff (Max) :
10nA ICBO
JESD-609 Code :
e3
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel) :
260
Power Dissipation-Max (Abs) :
5W
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Time@Peak Reflow Temperature-Max (s) :
30
Transition Frequency :
100MHz
Polarity/Channel Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
80V
Transistor Type :
NPN
Factory Lead Time :
20 Weeks
Current - Collector (Ic) (Max) :
1A
Configuration :
Single
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Power - Max :
800mW
Datasheets
2N3019P
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3019P from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-205AD, TO-39-3 Metal Can, 2N3019P pinout, 2N3019P datasheet PDF, 2N3019P amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3019P ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 10nA ICBO NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole

2N3019 PBFREE Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

2N3019 PBFREE Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz


2N3019 PBFREE Applications


There are a lot of Central Semiconductor Corp
2N3019 PBFREE applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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