2N3019

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Packaging :

Bulk

Current - Collector Cutoff (Max) :

10μA ICBO

Polarity :

NPN

Min Operating Temperature :

-65°C

Max Power Dissipation :

800mW

Voltage - Collector Emitter Breakdown (Max) :

80V

Power - Max :

800mW

Number of Pins :

3

Power Dissipation :

800mW

Operating Temperature :

-65°C~200°C TJ

Published :

2007

Emitter Base Voltage (VEBO) :

7V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA 10V

Factory Lead Time :

12 Weeks

Mount :

Through Hole

Collector Base Voltage (VCBO) :

140V

Radiation Hardening :

No

Current - Collector (Ic) (Max) :

1A

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Max Collector Current :

1A

Package / Case :

TO-205AA, TO-5-3 Metal Can

Supplier Device Package :

TO-5

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Number of Elements :

1

Collector Emitter Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Max Operating Temperature :

200°C

Collector Emitter Voltage (VCEO) :

80V