2N3019

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

800mW

Number of Pins :

3

Published :

2007

RoHS Status :

Non-RoHS Compliant

Max Operating Temperature :

200°C

Voltage - Collector Emitter Breakdown (Max) :

80V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA 10V

Collector Emitter Voltage (VCEO) :

80V

Package / Case :

TO-205AA, TO-5-3 Metal Can

Packaging :

Bulk

Mounting Type :

Through Hole

Transistor Type :

NPN

Polarity :

NPN

Supplier Device Package :

TO-5

Current - Collector (Ic) (Max) :

1A

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Max Power Dissipation :

800mW

Max Collector Current :

1A

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Mount :

Through Hole

Collector Base Voltage (VCBO) :

140V

Collector Emitter Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Min Operating Temperature :

-65°C

Operating Temperature :

-65°C~200°C TJ

Current - Collector Cutoff (Max) :

10μA ICBO

Emitter Base Voltage (VEBO) :

7V

Power Dissipation :

800mW