2N3500
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- Mfr.Part #
- 2N3500
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- SILICON TRANSISTOR NPN TO-39
- Stock
- 27,034
- In Stock ：
- 27,034
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 150V
- Factory Lead Time :
- 12 Weeks
- Terminal Form :
- Wire
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 150V
- Mount :
- Through Hole
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Transition Frequency :
- 150MHz
- Terminal Position :
- BOTTOM
- Published :
- 2007
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 150V
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Finish :
- TIN LEAD
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 300mA
- Packaging :
- Bulk
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Datasheets
- 2N3500
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N3500 Overview
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.The maximum collector current is 300mA volts.
2N3500 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2N3500 Applications
There are a lot of Microsemi Corporation
2N3500 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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