2N3501
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- Mfr.Part #
- 2N3501
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- BI-POLAR SILICON TRANSISTOR NPN
- Stock
- 47,189
- In Stock ：
- 47,189
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Number of Pins :
- 3
- Published :
- 2002
- Max Power Dissipation :
- 1W
- Lead Free :
- Contains Lead
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- RoHS Status :
- Non-RoHS Compliant
- Min Operating Temperature :
- -65°C
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Power Dissipation :
- 1W
- Packaging :
- Bulk
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 150V
- Max Collector Current :
- 300mA
- Polarity :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 300mA
- Operating Temperature :
- -65°C~200°C TJ
- Max Operating Temperature :
- 200°C
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Factory Lead Time :
- 12 Weeks
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 150V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Power - Max :
- 1W
- Supplier Device Package :
- TO-39 (TO-205AD)
- Collector Emitter Voltage (VCEO) :
- 150V
- Datasheets
- 2N3501
NPN -65°C~200°C TJ 10μA ICBO 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N3501 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-39 (TO-205AD).A 150V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 300mA volts at its maximum.
2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
2N3501 Applications
There are a lot of Microsemi Corporation
2N3501 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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