2N3501

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Mfr.Part #
2N3501
Manufacturer
Solid State Inc.
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
BI-POLAR SILICON TRANSISTOR NPN
Stock
47,189
In Stock :
47,189

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Manufacturer :
Solid State Inc.
Product Category :
Transistors - Bipolar (BJT) - RF
Polarity :
NPN
Published :
2002
Current - Collector Cutoff (Max) :
10μA ICBO
Mounting Type :
Through Hole
Package / Case :
TO-205AD, TO-39-3 Metal Can
Collector Base Voltage (VCBO) :
150V
RoHS Status :
Non-RoHS Compliant
Transistor Type :
NPN
Number of Elements :
1
Current - Collector (Ic) (Max) :
300mA
Max Collector Current :
300mA
Vce Saturation (Max) @ Ib, Ic :
400mV @ 15mA, 150mA
Emitter Base Voltage (VEBO) :
6V
Max Operating Temperature :
200°C
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Collector Emitter Breakdown Voltage :
150V
Power - Max :
1W
Min Operating Temperature :
-65°C
Max Power Dissipation :
1W
Lead Free :
Contains Lead
Power Dissipation :
1W
Collector Emitter Voltage (VCEO) :
150V
Voltage - Collector Emitter Breakdown (Max) :
150V
Operating Temperature :
-65°C~200°C TJ
Packaging :
Bulk
Factory Lead Time :
12 Weeks
Radiation Hardening :
No
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-39 (TO-205AD)
Number of Pins :
3
Datasheets
2N3501
Introducing Transistors - Bipolar (BJT) - RF Solid State Inc. 2N3501 from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-205AD, TO-39-3 Metal Can, Operating Temperature:-65°C~200°C TJ, Number of Pins:3, 2N3501 pinout, 2N3501 datasheet PDF, 2N3501 amp .Beyond Transistors - Bipolar (BJT) - RF Solid State Inc. 2N3501 ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Solid State Inc. 2N3501


NPN -65°C~200°C TJ 10μA ICBO 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole

2N3501 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-39 (TO-205AD).A 150V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 300mA volts at its maximum.

2N3501 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)


2N3501 Applications


There are a lot of Microsemi Corporation
2N3501 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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