2N3501UB
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- Mfr.Part #
- 2N3501UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A UB
- Stock
- 64
- In Stock ：
- 64
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 150V
- Current - Collector (Ic) (Max) :
- 300mA
- Terminal Finish :
- TIN LEAD
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 150V
- Factory Lead Time :
- 12 Weeks
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Transistor Element Material :
- SILICON
- Series :
- Military, MIL-PRF-19500/366
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.95
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transistor Type :
- NPN
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- Packaging :
- Bulk
- Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-SMD, No Lead
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Power Dissipation :
- 500mW
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2007
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Datasheets
- 2N3501UB
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
2N3501UB Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 15mA, 150mA.An emitter's base voltage can be kept at 6V to gain high efficiency.
2N3501UB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
2N3501UB Applications
There are a lot of Microsemi Corporation
2N3501UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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