2N3501L
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- Mfr.Part #
- 2N3501L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A TO5
- Stock
- 35,492
- In Stock ：
- 35,492
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Min Operating Temperature :
- -65°C
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Current - Collector (Ic) (Max) :
- 300mA
- Radiation Hardening :
- No
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Operating Temperature :
- 200°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Published :
- 2007
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Mount :
- Through Hole
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 150V
- Mounting Type :
- Through Hole
- Max Collector Current :
- 300mA
- Operating Temperature :
- -65°C~200°C TJ
- Supplier Device Package :
- TO-5
- Collector Emitter Voltage (VCEO) :
- 400mV
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 150V
- Factory Lead Time :
- 12 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Power - Max :
- 1W
- Datasheets
- 2N3501L
NPN -65°C~200°C TJ 10μA ICBO TO-205AA, TO-5-3 Metal Can Bulk Through Hole
2N3501L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 15mA, 150mA.This product comes in a TO-5 device package from the supplier.Device displays Collector Emitter Breakdown (150V maximal voltage).Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
2N3501L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-5
2N3501L Applications
There are a lot of Microsemi Corporation
2N3501L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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