2N4400-AP
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- Mfr.Part #
- 2N4400-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92
- Stock
- 25,328
- In Stock ：
- 25,328
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA
- JESD-30 Code :
- O-PBCY-W3
- Published :
- 2008
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 150mA 1V
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- Turn On Time-Max (ton) :
- 35ns
- Current - Collector (Ic) (Max) :
- 600mA
- Power - Max :
- 625mW
- Surface Mount :
- No
- Terminal Form :
- Wire
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Turn Off Time-Max (toff) :
- 255ns
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- 2N4400-AP
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4400-AP Overview
This device has a DC current gain of 50 @ 150mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 40V maximal voltage is present.
2N4400-AP Features
the DC current gain for this device is 50 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
2N4400-AP Applications
There are a lot of Micro Commercial Co
2N4400-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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