2N4400_D81Z
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- Mfr.Part #
- 2N4400_D81Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 44,226
- In Stock ：
- 44,226
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 150mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Base Part Number :
- 2N4400
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max :
- 625mW
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Datasheets
- 2N4400_D81Z
NPN -55°C~150°C TJ TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Through Hole
2N4400_D81Z Overview
In this device, the DC current gain is 50 @ 150mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.There is a 40V maximal voltage in the device due to collector-emitter breakdown.
2N4400_D81Z Features
the DC current gain for this device is 50 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
2N4400_D81Z Applications
There are a lot of ON Semiconductor
2N4400_D81Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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