2N4400TAR
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- Mfr.Part #
- 2N4400TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 5,784
- In Stock ：
- 5,784
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 150mA 1V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number :
- 2N4400
- Packaging :
- Tape and Box (TB)
- Current - Collector (Ic) (Max) :
- 600mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Power - Max :
- 625mW
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Datasheets
- 2N4400TAR
NPN -55°C~150°C TJ TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4400TAR Overview
DC current gain in this device equals 50 @ 150mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N4400TAR Features
the DC current gain for this device is 50 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
2N4400TAR Applications
There are a lot of ON Semiconductor
2N4400TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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