2N5682E4
- Mfr.Part #
- 2N5682E4
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 39,699
- In Stock :
- 39,699
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Series :
- -
- Product Type :
- BJTs - Bipolar Transistors
- Product Category :
- Bipolar Transistors - BJT
- Power - Max :
- 1 W
- Brand :
- Microchip Technology
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 10μA
- Subcategory :
- Transistors
- Transistor Type :
- NPN
- Frequency - Transition :
- -
- Manufacturer :
- Microchip
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Current - Collector (Ic) (Max) :
- 1 A
- Package :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 250mA, 2V
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Supplier Device Package :
- TO-39 (TO-205AD)
- Datasheets
- 2N5682E4
NPN -65°C ~ 200°C (TJ) 10μA TO-205AD, TO-39-3 Metal Can Through Hole
2N5682E4 Overview
In this device, the DC current gain is 40 @ 250mA, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Supplier device package TO-39 (TO-205AD) comes with the product.The device exhibits a collector-emitter breakdown at 120 V.
2N5682E4 Features
the DC current gain for this device is 40 @ 250mA, 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-39 (TO-205AD)
2N5682E4 Applications
There are a lot of Microchip Technology
2N5682E4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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