2SD1685G
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- Mfr.Part #
- 2SD1685G
- Manufacturer
- Sanyo
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO225-3
- Stock
- 23,903
- In Stock ：
- 23,903
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- Manufacturer :
- Sanyo
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Number of Terminations :
- 3
- Current - Collector (Ic) (Max) :
- 5A
- Max Collector Current :
- 5A
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Max Power Dissipation :
- 1.5W
- Package / Case :
- TO-225AA, TO-126-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 120MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 280 @ 500mA 2V
- hFE Min :
- 280
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- RoHS Compliant
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 60mA, 3A
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 500mV
- Element Configuration :
- Single
- Published :
- 2013
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 120MHz
- Collector Emitter Breakdown Voltage :
- 20V
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Case Connection :
- Isolated
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 500mV
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Datasheets
- 2SD1685G
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2SD1685G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 280 @ 500mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 60mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.A maximum collector current of 5A volts can be achieved.
2SD1685G Features
the DC current gain for this device is 280 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SD1685G Applications
There are a lot of ON Semiconductor
2SD1685G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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