2SD2702TL
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- Mfr.Part #
- 2SD2702TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS NPN 12V 1.5A TUMT3
- Stock
- 10,175
- In Stock ：
- 10,175
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 800mW
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Transistor Application :
- AMPLIFIER
- Package / Case :
- 3-SMD, Flat Lead
- Contact Plating :
- Copper, Tin
- Max Breakdown Voltage :
- 12V
- Gain Bandwidth Product :
- 400MHz
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 85mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- hFE Min :
- 270
- Terminal Position :
- Dual
- Base Part Number :
- 2SD2702
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 12V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 800mW
- Collector Emitter Voltage (VCEO) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 15V
- Number of Elements :
- 1
- Max Collector Current :
- 1.5A
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e2
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Transition Frequency :
- 400MHz
- Factory Lead Time :
- 13 Weeks
- Mount :
- Surface Mount
- HTS Code :
- 8541.21.00.75
- Number of Pins :
- 3
- Datasheets
- 2SD2702TL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SD2702TL Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 85mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 25mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.400MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
2SD2702TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 85mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SD2702TL Applications
There are a lot of ROHM Semiconductor
2SD2702TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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