BC635RL1
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- Mfr.Part #
- BC635RL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A TO92
- Stock
- 17,863
- In Stock ：
- 17,863
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- HTS Code :
- 8541.21.00.75
- Transition Frequency :
- 200MHz
- Peak Reflow Temperature (Cel) :
- 240
- Continuous Collector Current :
- 1A
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Voltage - Rated DC :
- 45V
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number :
- BC635
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 200MHz
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 25
- Collector Emitter Saturation Voltage :
- 500mV
- Additional Feature :
- EUROPEAN PART NUMBER
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Current Rating :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- 45V
- Max Power Dissipation :
- 625mW
- Published :
- 2005
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Lead Free :
- Contains Lead
- JESD-609 Code :
- e0
- Datasheets
- BC635RL1
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC635RL1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 200MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
BC635RL1 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 200MHz
BC635RL1 Applications
There are a lot of ON Semiconductor
BC635RL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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