BC636

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

150°C TJ

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

500mV

Mounting Type :

Through Hole

Weight :

201mg

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

-5V

Number of Elements :

1

Max Operating Temperature :

150°C

Max Power Dissipation :

1W

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Power Dissipation :

1W

Voltage - Collector Emitter Breakdown (Max) :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Element Configuration :

Single

Supplier Device Package :

TO-92-3

REACH SVHC :

No SVHC

Transistor Type :

PNP

hFE Min :

40

Collector Emitter Saturation Voltage :

-500mV

Frequency - Transition :

100MHz

Collector Base Voltage (VCBO) :

-45V

Power - Max :

1W

Width :

6.35mm

Base Part Number :

BC636

Termination :

Through Hole

Lifecycle Status :

OBSOLETE (Last Updated: 4 days ago)

Voltage - Rated DC :

-45V

Collector Emitter Breakdown Voltage :

45V

Frequency :

100MHz

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-1A

Current - Collector (Ic) (Max) :

1A

Polarity :

PNP

Gain Bandwidth Product :

100MHz

Mount :

Through Hole

Min Operating Temperature :

-65°C

Length :

6.35mm

Height :

6.35mm

Number of Pins :

3

Max Collector Current :

1A