BC635,116

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Surface Mount :

No

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

VCEsat-Max :

0.5 V

Polarity/Channel Type :

NPN

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Element Material :

SILICON

Number of Elements :

1

Frequency - Transition :

180MHz

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

Base Part Number :

BC635

Published :

2007

Configuration :

Single

Current - Collector (Ic) (Max) :

1A

Power Dissipation-Max (Abs) :

0.8W

Reach Compliance Code :

Unknown

Voltage - Collector Emitter Breakdown (Max) :

45V

JESD-30 Code :

O-PBCY-T3

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Power - Max :

830mW

Transition Frequency :

180MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Terminal Position :

BOTTOM