BC635RL1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Reach Compliance Code :

Unknown

Number of Terminations :

3

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

1A

Frequency :

200MHz

Published :

2005

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Current Rating :

1A

Voltage - Rated DC :

45V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Gain Bandwidth Product :

200MHz

Pin Count :

3

Max Collector Current :

1A

Additional Feature :

EUROPEAN PART NUMBER

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

45V

Number of Pins :

3

RoHS Status :

RoHS Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

BC635

JESD-609 Code :

e1

Power Dissipation :

625mW

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

45V

Transition Frequency :

200MHz

Transistor Type :

NPN

hFE Min :

25

Number of Elements :

1

ECCN Code :

EAR99

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

45V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Max Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Element Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position :

BOTTOM

Collector Emitter Saturation Voltage :

500mV