BC847C

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

200 mV

Voltage :

45 V

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation-Max (Abs) :

0.31 W

Collector Emitter Breakdown Voltage :

45 V

Number of Elements :

1

Number of Pins :

3

Number of Terminals :

3

Polarity :

NPN

Manufacturer :

Diotec Semiconductor AG

HTS Code :

8541.21.00

Transition Frequency :

100 MHz

Pin Count :

3

Mount :

Reverse

RoHS :

Compliant

Power Dissipation :

250 mW

Max Junction Temperature (Tj) :

150 °C

JESD-609 Code :

e3

Ambient Temperature Range High :

150 °C

Height :

1.1 mm

Terminal Form :

Gull wing

Min Operating Temperature :

-65 °C

Max Operating Temperature :

150 °C

Surface Mount :

yes

Package Shape :

RECTANGULAR

Gain Bandwidth Product :

100 MHz

Emitter Base Voltage (VEBO) :

6 V

Termination :

SMD/SMT

Qualification Status :

Not Qualified

Configuration :

Single

JEDEC-95 Code :

TO-236

Subcategory :

Other Transistors

ECCN Code :

EAR99

hFE Min :

110

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

45 V

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

250 mW

Terminal Position :

Dual

Collector Current-Max (IC) :

0.1 A

Current :

1 A

DC Current Gain-Min (hFE) :

420

Collector-Emitter Voltage-Max :

45 V

Max Collector Current :

100 mA

JESD-30 Code :

R-PDSO-G3

Collector Base Voltage (VCBO) :

50 V

REACH SVHC :

No SVHC

Reach Compliance Code :

Compliant