BD809
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- Mfr.Part #
- BD809
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220
- Stock
- 36,709
- In Stock ：
- 36,709
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 1.5MHz
- Current Rating :
- 10A
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 300mA, 3A
- Frequency :
- 1.5MHz
- hFE Min :
- 30
- Contact Plating :
- Tin
- Surface Mount :
- No
- Power Dissipation :
- 90W
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.28mm
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- Gain Bandwidth Product :
- 1.5MHz
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 2V
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 1.1V
- Collector Emitter Voltage (VCEO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 90W
- Weight :
- 4.535924g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Packaging :
- Tube
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Height :
- 15.75mm
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Max Collector Current :
- 10A
- Width :
- 4.82mm
- Number of Elements :
- 1
- Voltage - Rated DC :
- 80V
- Datasheets
- BD809
NPN -55°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD809G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 4A 2V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 1.5MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 10A volts at its maximum.
BD809G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz
BD809G Applications
There are a lot of ON Semiconductor
BD809G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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