BD809G
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- Mfr.Part #
- BD809G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220
- Stock
- 400
- In Stock ：
- 400
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 2V
- Current Rating :
- 10A
- Number of Pins :
- 3
- Transition Frequency :
- 1.5MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-220-3
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 90W
- Number of Elements :
- 1
- Power Dissipation :
- 90W
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 1.1V
- Width :
- 4.82mm
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 15.75mm
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 80V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- hFE Min :
- 30
- Collector Emitter Voltage (VCEO) :
- 80V
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Frequency :
- 1.5MHz
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 300mA, 3A
- Max Collector Current :
- 10A
- Published :
- 2007
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.28mm
- Gain Bandwidth Product :
- 1.5MHz
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 80V
- Datasheets
- BD809G
NPN -55°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD809G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 4A 2V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 1.5MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 10A volts at its maximum.
BD809G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz
BD809G Applications
There are a lot of ON Semiconductor
BD809G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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