BD809G
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- Mfr.Part #
- BD809G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220
- Stock
- 400
- In Stock ：
- 400
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 1.1V
- Current Rating :
- 10A
- Weight :
- 4.535924g
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tube
- Height :
- 15.75mm
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Power Dissipation :
- 90W
- Collector Emitter Voltage (VCEO) :
- 80V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 1.5MHz
- Width :
- 4.82mm
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 300mA, 3A
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 90W
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 10A
- Frequency :
- 1.5MHz
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 2V
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- COLLECTOR
- Length :
- 10.28mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Pins :
- 3
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 80V
- hFE Min :
- 30
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 1.5MHz
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Datasheets
- BD809G
NPN -55°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD809G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 4A 2V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 1.5MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 10A volts at its maximum.
BD809G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz
BD809G Applications
There are a lot of ON Semiconductor
BD809G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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