BD809G

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Mfr.Part #
BD809G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 10A TO220
Stock
400
In Stock :
400

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JEDEC-95 Code :
TO-220AB
Number of Pins :
3
Gain Bandwidth Product :
1.5MHz
Width :
4.82mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 4A 2V
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
1
Published :
2007
REACH SVHC :
No SVHC
Vce Saturation (Max) @ Ib, Ic :
1.1V @ 300mA, 3A
Collector Base Voltage (VCBO) :
80V
Operating Temperature :
-55°C~150°C TJ
Weight :
4.535924g
Length :
10.28mm
Transition Frequency :
1.5MHz
Current Rating :
10A
Element Configuration :
Single
Collector Emitter Saturation Voltage :
1.1V
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Voltage - Rated DC :
80V
Transistor Application :
AMPLIFIER
Max Power Dissipation :
90W
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
hFE Min :
30
Frequency :
1.5MHz
Max Breakdown Voltage :
80V
Surface Mount :
No
Factory Lead Time :
2 Weeks
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Collector Emitter Breakdown Voltage :
80V
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Voltage (VCEO) :
80V
Case Connection :
COLLECTOR
Contact Plating :
Tin
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Pin Count :
3
Pbfree Code :
yes
Max Collector Current :
10A
Number of Terminations :
3
Mounting Type :
Through Hole
Package / Case :
TO-220-3
Power Dissipation :
90W
Transistor Type :
NPN
Current - Collector Cutoff (Max) :
1mA ICBO
Lead Free :
Lead Free
Height :
15.75mm
JESD-609 Code :
e3
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
BD809G
Introducing Transistors - Bipolar (BJT) - Single onsemi BD809G from Xinshop,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, BD809G pinout, BD809G datasheet PDF, BD809G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD809G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD809G


NPN -55°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD809G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 4A 2V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 1.5MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 10A volts at its maximum.

BD809G Features


the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz


BD809G Applications


There are a lot of ON Semiconductor
BD809G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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