DMN2004K-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

59.4 ns

Feedback Cap-Max (Crss) :

20 pF

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

350mW Ta

Max Junction Temperature (Tj) :

150°C

Current - Continuous Drain (Id) @ 25°C :

630mA Ta

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Length :

2.9mm

Power Dissipation :

350mW

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.3mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain Current-Max (Abs) (ID) :

0.54A

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Height :

1.1mm

Mounting Type :

Surface Mount

Radiation Hardening :

No

Continuous Drain Current (ID) :

540mA

Number of Elements :

1

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Vgs (Max) :

±8V

Fall Time (Typ) :

37.6 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

FET Type :

N-Channel

Resistance :

550mOhm

Pin Count :

3

Terminal Position :

Dual

Published :

2009

Mount :

Surface Mount

Element Configuration :

Single

Weight :

7.994566mg

Gate to Source Voltage (Vgs) :

8V

Pbfree Code :

yes

Turn On Delay Time :

5.7 ns

Nominal Vgs :

1.6 V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

20V

Threshold Voltage :

1.6V

Operating Temperature :

-65°C~150°C TJ

Rise Time :

8.4ns

Terminal Form :

Gull wing

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON