DMN2004TK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Number of Channels :

1

FET Type :

N-Channel

Length :

1.6mm

Transistor Element Material :

SILICON

Width :

800μm

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.55Ohm

Drain to Source Breakdown Voltage :

20V

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Weight :

2.012816mg

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

540mA

Number of Pins :

3

Transistor Application :

SWITCHING

Number of Terminations :

3

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

540mA Ta

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

150mW Ta

Feedback Cap-Max (Crss) :

20 pF

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Power Dissipation :

150mW

Drain Current-Max (Abs) (ID) :

0.54A

Factory Lead Time :

14 Weeks

Number of Elements :

1

Element Configuration :

Single

Height :

750μm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

8V

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Rise Time :

9.1ns

Fall Time (Typ) :

9.1 ns

Package / Case :

SOT-523

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Pin Count :

3

Vgs (Max) :

±8V

Turn On Delay Time :

8.5 ns

Radiation Hardening :

No

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

51 ns