DMN2004TK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

FET Type :

N-Channel

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

8.5 ns

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Packaging :

Tape and Reel (TR)

Feedback Cap-Max (Crss) :

20 pF

Package / Case :

SOT-523

Terminal Form :

Gull wing

Turn-Off Delay Time :

51 ns

Drain-source On Resistance-Max :

0.55Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Transistor Application :

SWITCHING

Height :

750μm

Width :

800μm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Continuous Drain Current (ID) :

540mA

Transistor Element Material :

SILICON

Pin Count :

3

Vgs(th) (Max) @ Id :

1V @ 250μA

REACH SVHC :

No SVHC

Pbfree Code :

yes

JESD-609 Code :

e3

Published :

2010

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Single

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

9.1 ns

Current - Continuous Drain (Id) @ 25°C :

540mA Ta

Power Dissipation-Max :

150mW Ta

ECCN Code :

EAR99

Weight :

2.012816mg

Factory Lead Time :

14 Weeks

Radiation Hardening :

No

Number of Channels :

1

Length :

1.6mm

Number of Terminations :

3

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

0.54A

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

150mW

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

Rise Time :

9.1ns