DMN2005UFG-7

- Mfr.Part #
- DMN2005UFG-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 18.1A PWRDI3333
- Stock
- 21,102





- In Stock :
- 21,102
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Matte Tin (Sn)
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 164nC @ 10V
- Published :
- 2016
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 114 ns
- Gate to Source Voltage (Vgs) :
- 4.5V
- Rise Time :
- 25.7ns
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerVDFN
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 38 ns
- Factory Lead Time :
- 23 Weeks
- Turn On Delay Time :
- 12.4 ns
- Capacitance :
- 6.495nF
- Number of Pins :
- 8
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 6495pF @ 10V
- Rds On (Max) @ Id, Vgs :
- 4.6m Ω @ 13.5A, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 18.1A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 1.05W Ta
- Vgs (Max) :
- ±12V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Weight :
- 72.007789mg
- Continuous Drain Current (ID) :
- 18.1A
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 20V
- Datasheets
- DMN2005UFG-7

N-Channel Tape & Reel (TR) 4.6m Ω @ 13.5A, 4.5V ±12V 6495pF @ 10V 164nC @ 10V 20V 8-PowerVDFN
DMN2005UFG-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6495pF @ 10V.This device conducts a continuous drain current (ID) of 18.1A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 114 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 4.5V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
DMN2005UFG-7 Features
a continuous drain current (ID) of 18.1A
the turn-off delay time is 114 ns
a 20V drain to source voltage (Vdss)
DMN2005UFG-7 Applications
There are a lot of Diodes Incorporated
DMN2005UFG-7 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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