DMN2050LFDB-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Drain Current-Max (Abs) (ID) :

4.5A

JESD-30 Code :

S-PDSO-N6

Package / Case :

6-UDFN Exposed Pad

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

20V

FET Feature :

Logic Level Gate

Reference Standard :

AEC-Q101

Max Power Dissipation :

730mW

Rise Time :

8ns

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

25 ns

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

15 Weeks

Turn On Delay Time :

5 ns

Fall Time (Typ) :

8 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2013

Rds On (Max) @ Id, Vgs :

45m Ω @ 5A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Additional Feature :

High Reliability

Number of Elements :

2

JESD-609 Code :

e4

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

3.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.045Ohm

Drain to Source Voltage (Vdss) :

20V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

389pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR