FDB33N25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2135pF @ 25V

Pbfree Code :

yes

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-30 Code :

R-PSSO-G2

Published :

2004

Radiation Hardening :

No

Rise Time :

230ns

Element Configuration :

Single

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

120 ns

Mount :

Surface Mount

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Power Dissipation :

235W

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Weight :

1.31247g

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn On Delay Time :

35 ns

Rds On (Max) @ Id, Vgs :

94m Ω @ 16.5A, 10V

REACH SVHC :

No SVHC

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

75 ns

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Number of Pins :

3

Nominal Vgs :

3 V

Threshold Voltage :

3V

Length :

10.67mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Contact Plating :

Tin

Continuous Drain Current (ID) :

33A

Resistance :

94mOhm

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

235W Tc

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Case Connection :

DRAIN

Width :

11.33mm

Series :

UniFET™

Factory Lead Time :

7 Weeks

Drain to Source Breakdown Voltage :

250V

Height :

4.83mm