FDB3502

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Power Dissipation-Max :

3.1W Ta 41W Tc

Drain Current-Max (Abs) (ID) :

6A

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

ECCN Code :

EAR99

Number of Terminations :

2

Turn On Delay Time :

9 ns

Rds On (Max) @ Id, Vgs :

47m Ω @ 6A, 10V

Length :

10.67mm

Transistor Application :

SWITCHING

Resistance :

47mOhm

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

815pF @ 40V

Rise Time :

3ns

Pulsed Drain Current-Max (IDM) :

40A

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Continuous Drain Current (ID) :

6A

Lead Free :

Lead Free

Width :

11.33mm

Terminal Finish :

Tin (Sn)

Weight :

1.31247g

Turn-Off Delay Time :

13 ns

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

3.1W

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

6A Ta 14A Tc

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

75V

Published :

2007

Mount :

Surface Mount

Fall Time (Typ) :

3 ns

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Height :

4.83mm

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

54 mJ

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Pbfree Code :

yes

Series :

PowerTrench®