FDB3632
- Mfr.Part #
- FDB3632
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 12A/80A D2PAK
- Stock
- 42,478
- In Stock :
- 42,478
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 39ns
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Dual Supply Voltage :
- 100V
- Factory Lead Time :
- 8 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 80A
- Power Dissipation-Max :
- 310W Tc
- Turn On Delay Time :
- 30 ns
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 80A, 10V
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Termination :
- SMD/SMT
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta 80A Tc
- Width :
- 9.65mm
- Threshold Voltage :
- 4V
- Weight :
- 1.31247g
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation :
- 310W
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 46 ns
- Resistance :
- 9mOhm
- Published :
- 2013
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 100V
- Turn-Off Delay Time :
- 96 ns
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Length :
- 10.67mm
- Height :
- 5.08mm
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Max Junction Temperature (Tj) :
- 175°C
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Current Rating :
- 44A
- Nominal Vgs :
- 4 V
- Datasheets
- FDB3632

N-Channel Tape & Reel (TR) 9m Ω @ 80A, 10V ±20V 6000pF @ 25V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB3632 Description
FDB3632 100V, 80A, 9m N-Channel PowerTrench? MOSFET The latest shielded gate PowerTrench? MOSFET may significantly increase the efficiency of synchronous rectification by combining a reduced QSYNC and soft reverse-recovery intrinsic body diode performance with quick switching.
FDB3632 Features
-
RoHS Compliant
-
Low Miller Charge
-
Low QRR Body Diode
-
QG(tot) = 84nC (Typ.) @ VGS = 10V
-
RDS(ON) = 7.5mΩ (Typ.) @ VGS = 10V, ID = 80A
-
UIS Capability (Single Pulse and Repetitive Pulse)
FDB3632 Applications
-
Workstation
-
Server & Mainframe
-
Other Data Processing
-
AC-DC Merchant Power Supply - Servers & Workstations
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