FDB3652

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

36 Weeks

Turn-Off Delay Time :

26 ns

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

9A

Radiation Hardening :

No

Current Rating :

61A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Threshold Voltage :

4V

Nominal Vgs :

4 V

Weight :

1.31247g

Current - Continuous Drain (Id) @ 25°C :

9A Ta 61A Tc

Length :

6.35mm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

yes

Voltage - Rated DC :

100V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Continuous Drain Current (ID) :

61A

Power Dissipation-Max :

150W Tc

Contact Plating :

Tin

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

FET Type :

N-Channel

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 25V

Case Connection :

DRAIN

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

16m Ω @ 61A, 10V

Number of Elements :

1

Fall Time (Typ) :

45 ns

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Turn On Delay Time :

12 ns

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 20 hours ago)

Resistance :

16mOhm

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Power Dissipation :

150W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Height :

6.35mm

Rise Time :

85ns

Width :

6.35mm